Reactive Ion Etchers (RIE)

We manufacture Reactive Ion Etchers (RIE) designed for etching films of oxides, nitrides, polymers etc. We offer two basic sizes to accommodate a 6" wafer and a 12" wafer, and custom requests are welcome. Your RIE can be manually or PC controlled, and can be made as a Table Top model or stand-alone cabinet system.

Click to download literature on our:
RIE600 Reactive Ion Etcher

Problems opening our files? Upgrade to the latest version of Adobe Reader

Philosophy of Design:

The RIE600W-Reactive Ion Etcher is intended for an isotropic etching of materials such as metal oxides, silicon, and microelectronic devices. This tabletop instrument is not only suitable for R&D, but also can be used for small pilot production applications.

The full 300 watt RF power supply with an auto matching network, and corrosive gases used can produce etch rates 10?/sec for a variety of materials.

The auto RF power control helps reproducibility of processes which otherwise is not possible with a manual RF power control.

The RIE600 turbo drag pumped system can reach base pressures of 10 -5 Torr. This low vacuum eliminates impurities prior to starting each process. The system can be used in manual mode if new setting of parameters is necessary for a new etch process.

Process Chamber

An 12” diameter x 6” high electro-polished stainless steel chamber, with a view port on the side; a hinged opening for manual wafer loading, with a water cooled substrate stage and a gas ring.

Vacuum Pumping

A 30 l/sec turbo-molecular drag pump with neutral gas purging capability backed by a chemical series two stage direct drive rotary vane pump with Fomblin fluid; vent valve, connecting hoses, etc. Dry nitrogen to vent the bearing is necessary in order to protect the pump against corrosive gases in case corrosive gases are used.

Vacuum Gauging

Capacitance monometer (MKS Baratrons) for measuring vacuum in the range of 1-10 -5 Torr and for process monitoring and control with front panel digital read-outs will be used.

Gas Delivery/Control

Two mass flow controllers (MFC’s) with shut-off valves for non-corrosive or corrosive gases, an integral gas shower over the wafer stage to achieve good uniformity of etching will be used.

Wafer/Sample Stage

A 6” diameter stainless steel water-cooled stage up to 8” diameter or any size and shape wafer/sample can be mounted on the stage. Uniformity of etching /cleaning less than 5% over the entire wafer.

RF Power Supply

A 600 watt, 13.56 MHz air-cooled solid state, fully protected state of the art power supply with auto matching network and display of forward and reflected power. The auto-matching network will maintain the reflected power less than 5% of total power.

Input Power

Water Cooling

2 Liter per minute at 15°C and 40/50 psi. (A water chiller will be required if long process times are intended.)

The whole system is integrated and interlocked for safety. All displays of operating parameters and controls are conveniently located on the tabletop model. Installed on the floor along with the rotary pump, the whole system can be on a convenient stand. In either case, the system is compatible with the CLEAN ROOM OPERATION, by locating the rotary pump, gas cylinders, and wafer chiller outside the CLEAN ROOM.

All piping for gases and vacuum, as well as fittings, are of stainless steel, ensuring compatibility with corrosive gases. In addition, if there is a special requirement, we can use electro-polished (inside) tubes and Monel fittings AT EXTRA COST. The ultimate vacuum achievable is around 3 x 10 -6 Torr. Pump down time to attain the process vacuum of around 3 x 10 -5 Torr will be around 15 minutes. Long process times as long as a water chiller and sufficient process gas is available can be used.

Reactive Ion Etcher

Model No. RIE600W